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Fault modelling and accelerated simulation of integrated circuits manufacturing defects under process variation

机译:工艺变化下集成电路制造缺陷的故障建模与加速仿真

摘要

As silicon manufacturing process scales to and beyond the 65-nm node, process variation can no longer be ignored. The impact of process variation on integrated circuit performance and power has received significant research input. Variation-aware test, on the other hand, is a relatively new research area that is currently receiving attention worldwide.Research has shown that test without considering process variation may lead to loss of test quality. Fault modelling and simulation serve as a backbone of manufacturing test. This thesis is concerned with developing efficient fault modelling techniques and simulation methodologies that take into account the effect of process variation on manufacturing defects with particular emphasis on resistive bridges and resistive opens.The first contribution of this thesis addresses the problem of long computation time required to generate logic fault of resistive bridges under process variation by developing a fast and accurate modelling technique to model logic fault behaviour of resistive bridges.The new technique is implemented by employing two efficient voltage calculation algorithms to calculate the logic threshold voltage of driven gates and critical resistance of a fault-site to enable the computation of bridge logic faults without using SPICE. Simulation results show that the technique is fast (on average 53 times faster) and accurate (worst case is 2.64% error) when compared with HSPICE. The second contribution analyses the complexity of delay fault simulation of resistive bridges to reduce the computation time of delay fault when considering process variation. An accelerated delay fault simulation methodology of resistive bridges is developed by employing a three-step strategy to speed up the calculation of transient gate output voltage which is needed to accurately compute delay faults. Simulation results show that the methodology is on average 17.4 times faster, with 5.2% error in accuracy, when compared with HSPICE. The final contribution presents an accelerated simulation methodology of resistive opens to address the problem of long simulation time of delay fault when considering process variation. The methodology is implemented by using two efficient algorithms to accelerate the computation of transient gate output voltage and timing critical resistance of an open fault-site. Simulation results show that the methodology is on average up to 52 times faster than HSPICE, with 4.2% error in accuracy.
机译:随着硅制造工艺扩展到65纳米节点甚至更高,工艺变化将不再被忽略。工艺变化对集成电路性能和功率的影响已得到大量研究投入。另一方面,变化感知测试是一个相对较新的研究领域,目前正在全世界范围内受到关注。研究表明,不考虑过程变化的测试可能会导致测试质量下降。故障建模和仿真是制造测试的基础。本文致力于开发有效的故障建模技术和仿真方法,其中要考虑到工艺变化对制造缺陷的影响,特别是电阻桥和电阻开路。本文的首要贡献是解决计算时间长的问题。通过开发一种快速准确的建模技术来建模电阻桥的逻辑故障行为,从而在工艺变化下生成电阻桥的逻辑故障。该技术是通过使用两种有效的电压计算算法来计算驱动门的逻辑阈值电压和临界电阻来实现的故障站点,无需使用SPICE即可计算桥逻辑故障。仿真结果表明,与HSPICE相比,该技术速度快(平均快53倍)且准确(最坏情况是2.64%的错误)。第二部分分析了电阻桥延迟故障仿真的复杂性,以减少考虑过程变化时延迟故障的计算时间。通过采用三步策略来开发电阻桥的加速延迟故障仿真方法,以加快瞬态栅极输出电压的计算速度,这是准确计算延迟故障所需的。仿真结果表明,与HSPICE相比,该方法平均快17.4倍,准确度误差为5.2%。最后的贡献提出了一种电阻开路的加速仿真方法,以解决考虑过程变化时延迟故障的仿真时间过长的问题。该方法通过使用两种有效算法来实现,以加速瞬态栅极输出电压和开路故障站点的时序临界电阻的计算。仿真结果表明,该方法平均比HSPICE快52倍,准确度误差为4.2%。

著录项

  • 作者

    Zhong Shida;

  • 作者单位
  • 年度 2013
  • 总页数
  • 原文格式 PDF
  • 正文语种 {"code":"en","name":"English","id":9}
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