Proceedings of the International Symposium on Integrated Ferroelectrics (15th) (ISIF-15). Part 2 of 8. Volume 53, (2003). Held in Colorado Springs, Colorado on March 9-12, 2003

摘要

;Partial Contents: FeRAM Process Integrations (Spacers Alternatives for Integration of (3D) Stacked SBT FeCAPs; Plasma Etch Processes for Embedded FRAM Integration, Characteristics of an Oxygen Barrier Based on Bi-Layered Ir; Novel Damage Curing Technology on One-Mask Etched Ferroelectric Capacitor for Beyond 0.25 micromoles FRAM, The Profile and Device Characterization of High Wafer Temperature Etched Ir/PZT/Ir Stacks); Testing and Characterization (Characterization of HYNIX 16M FeRAM Adopted Novel Sensing Scheme, Non-Linear Imprint Behavior of PZT Thin-Films, Depth Profiling of Hydrogen and Oxygen in Ferroelectric Films Using High-Energy Ion Beam, Study on the Surface Potential Behavior of Ultra Thin PZT Utilizing SPM (Scanning Probe Microscope), Investigation of the High Frequency Properties of BST Thin Films-A Comparison of Three Different Commonly Used Methods).