FINAL REPORT ON Feasibility Study of Diffused Semiconductor Devices SILICON POWER TRANSISTOR

摘要

1. Feasibility, both mechanical and electrical, has been demonstrated for Device 15 and for Device 16 to a modified specification. This has been done by the approach of double diffusion for which two feasible variations are described.n2. Performance data for two lots of fifty feasibility samples is given in detail and analyzed.n3. Manufacturing feasibility is discussed and the conclusion is drawn that it is practical to make both devices in question by either of the two variations of double diffusion if the modified specification for Device 16 is allowed.n4. Preliminary Process, Target and Objective specifications are given;n5. A practical approach to Phase 2 of the I. P.S. Program is postulated.