Silicon Solar Cell Development and Radiation Effects Study for Low Temperature and Low Illumination Intensity Operation, Volume 2

摘要

The results are presented of a study to determine the effect of in-situ proton irradiation upon low temperature, low intensity performance of several cell types. The cell types were selected in an attempt to distinguish variations in temperature-dependent radiation resistance which could be attributed to the n-p or p-n structure, diffused or implanted junctions, crucible grown or float-zone type base material, and high or low base resistivity. The results indicate that while expected variations of performance occur at room temperature, all cell types degrade more or less similarly at lower temperatures with normalized degradation becoming increasingly rapid as temperature is reduced. Recommendations for an optimized cell for Jupiter probe use are included along with a definition of the testing required on these cells to insure good performance characteristics.