Reflection Amplification from Supercritical Gunn Diodes at X, J & Q band

摘要

This is the report for the second and final year of the contract. It begins by summarizing the total work done during the two-year period at X and J band where characterization of high level operation has been the principal objective, and at Q band where the low nose properties of reflection amplifiers, particularly in InP, have been the subject of study.