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Design and optimization of a tunable W-band subharmonic cavity based Gunn diode oscillator using computer-aided design technique

机译:基于计算机辅助设计技术的可调谐W波段亚谐振腔Gunn二极管振荡器的设计和优化

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摘要

In this work, a systematic computer-aided design technique is proposed to minimize the fabrication iteration for the design and development of W-band subharmonic Gunn diode oscillator with wideband tunable bandwidth at W-band. Gunn diode based single diode oscillator structure was divided into passive and active parts to facilitate the modeling of the component on appropriate simulation environment. Resonating structure and package of Gunn diode are modeled as passive circuit in high frequency structure simulator (HFSS). To satisfy the oscillator design equation, disc-post resonating structure is tuned in HFSS and its S-parameters are collaborated with the model of Gunn diode in advanced design system. Magnitude and phase of reflection coefficient (S11) is observed to ascertain the desired frequency of oscillation. Proper tuning of disc-post structure is done on simulation platform, which reduces the fabrication complexity and cost as well. The measurement results validate the models designed using EM and circuit simulator. The measured maximum stable RF power without any fabrication iteration is 14.2 dBm. A tunable bandwidth of 4 GHz with power output ripple of +/- 1 dB is measured by using a movable backshort.
机译:在这项工作中,提出了一种系统的计算机辅助设计技术,以最小化在W波段具有宽带可调带宽的W波段次谐波Gunn二极管振荡器的设计和开发。基于Gunn二极管的单二极管振荡器结构分为无源和有源部分,以便于在适当的仿真环境下对组件进行建模。在高频结构仿真器(HFSS)中,将Gunn二极管的谐振结构和封装建模为无源电路。为了满足振荡器设计方程,在HFSS中调整了圆盘柱谐振结构,并在高级设计系统中将其S参数与耿氏二极管模型配合使用。观察反射系数的大小和相位(S11),以确定所需的振荡频率。在仿真平台上完成了碟片结构的适当调整,这也降低了制造的复杂性和成本。测量结果验证了使用EM和电路模拟器设计的模型。无需任何制造迭代即可测得的最大稳定RF功率为14.2 dBm。通过使用可移动的反向短路器,可测量4 GHz的可调带宽和+/- 1 dB的功率输出纹波。

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