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Development and Fabrication of S-Band Chip Varactor Parametric Amplifier

机译:s波段片式变容二极管参量放大器的开发与制作

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摘要

A noncryogenic, S-band parametric amplifier operating in the 2.2 to 2.3 GHz band and having an average input noise temperature of less than 30 K was built and tested. The parametric amplifier module occupies a volume of less than 1-1/4 cubic feet and weighs less than 60 pounds. The module is designed for use in various NASA ground stations to replace larger, more complex cryogenic units which require considerably more maintenance because of the cryogenic refrigeration system employed. The amplifier can be located up to 15 feet from the power supply unit. Optimum performance was achieved through the use of high-quality unpackaged (chip) varactors in the amplifier design. (Author)

著录项

  • 作者

    Kramer, E.;

  • 作者单位
  • 年度 1974
  • 页码 1-182
  • 总页数 182
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 工业技术;
  • 关键词

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