Design for ASIC reliability for low-temperature applications

摘要

In this paper, we present a methodology to design for reliability for low temperature applications without requiring process improvement. The developed hot carrier aging lifetime projection model takes into account both the transistor substrate current profile and temperature profile to determine the minimum transistor size needed in order to meet reliability requirements. The methodology is applicable for automotive, military, and space applications, where there can be varying temperature ranges. A case study utilizing this methodology is given to design for reliability into a custom application-specific integrated circuit (ASIC) for a Mars exploration mission.