The Measurement of Temperature Instabilities and Their Effect on the Liquid Phase Epitaxial Growth of Gallium Arsenide

摘要

Epitaxial layers grown on gallium arsenide substrates using the steady state temperature gradient form of liquid phase epitaxy are discussed and compared to the growth rate calculated for diffusion limited conditions. The large variation in epilayer thickness over the surface of a single sample, and the nonreproducibility from sample to sample are investigated. Various measurements of the temperature and its local variation within the gallium melt solution are described. An attempt to relate the observed variations and instabilities to the epitaxial layers actually grown is presented.