Electro-Optical Studies of Semiconductor Compounds for Electroluminescent and Laser Devices

摘要

Properties of the semiconductor compounds used in high field electroluminescence display devices and optical fiber communication lasers are discussed. The absorption edge of ZnS, InP, and InGaAsP as a function of growth conditions, doping, and composition, respectively, are studied by electroreflectance. It is shown that the growth temperature, reactant materials, and growth method contribute to the crystalline properties of the ZnS thin films. A method to determine the energy gaps from the overlapping electroreflectance line profiles is developed. The band population effects in InP are studied, and the composition dependence of four energy gaps in InGaAsP is described. The electrical and optical properties of InGaAsP/InP laser structures are characterized. Modifications in the construction of the double channel planar buried heterostructure laser improve temperature susceptibility. The V-groove distributed feedback laser is proved to be a remarkable dynamic single mode device.