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The development of radiation resistant insulating layers for planar silicon technology, 29 May 1968 - 28 June 1969

机译：用于平面硅技术的抗辐射绝缘层的开发，1968年5月29日 - 1969年6月28日

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摘要

Ion implantation method for improving radiation resistance of thermal oxides on silicon

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Donovan, R. P.; Monteith, L. K.; Simons, M.;
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年度 1970
页码 1-50
总页数 50
原文格式 PDF
正文语种 eng
中图分类工业技术 ;
关键词
METAL OXIDE SEMICONDUCTORS; PLANAR STRUCTURES; RADIATION TOLERANCE; ION INJECTION; SILICON TRANSISTORS;

机译：金属氧化物半导体;平面结构;辐射容忍度;离子注入;硅晶体管;

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8. The Development of Radiation Resistant Insulating Layers for Planar Silicon Technology, 29 May 1968 - 28 June 1969 [R] . Donovan, R. P., Monteith, L. K., Simons, M. 1970

机译：平面硅技术的抗辐射绝缘层的发展，1968年5月29日 - 1969年6月28日

The development of radiation resistant insulating layers for planar silicon technology, 29 May 1968 - 28 June 1969

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