Electrical Characterization of Printed Nanocrystalline Silicon Films: Cooperative Research and Development Final Report, CRADA Number: CRD-07-00241

摘要

This CRADA helped Innovalight characterize and quantify their ink-based selective emitter technology. Controlled localized doping of selective emitter structures via Innovalight Silicon Ink technology was demonstrated. Both secondary ion mass spectrometry and scanning capacitance microscopy revealed abrupt lateral dopant profiles at ink-printed boundaries. Uniform doping of iso- and pyramidal surfaces was also verified using scanning electron microscopy dopant contrast imaging.