Cl(sub 2)+Ar reactive-ion-beam etching of InGaAlAs for smooth, low- damage definition of asymmetric Fabry-Perot optical transmission modulators

摘要

Cl(sub 2)+Ar Reactive-Ion-Beam Etching is demonstrated for anisotropic, low-damage etching of InAlGaAs semiconductor alloys for use as optical transmission modulators at 1.32 (mu)m wavelength.