Magnetic force microscopy of single-domain cobalt dots patterned using interference lithography

摘要

We have fabricated arrays of Co dots of diameters 100 and 70 nm using interference lithography. Density of these arrays is 7.2x10(sup 9)/in(sup 2). Magnetic force microscopy indicate that the Co dots are single domain with moments that can be controlled to point either in-plane or out-of-plane. Interference lithography is a process that is easily scaled to large areas and is potentially capable of high throughput. Large, uniform arrays of single-domain structures are potentially useful for high-density, low-noise data storage.