Current status of low-temperature radiator thermophotovoltaic devices

摘要

The current performance status of low-temperature radiator (< 1,000 C) thermophotovoltaic (TPV) devices is presented. For low-temperature radiators, both power density and efficiency are equally important in designing an effective TPV system. Comparisons of 1 cm x 1 cm, 0.55 eV InGaAs and InGaAsSb voltaic devices are presented. Currently, InGaAs lattice-mismatched devices offer superior performance in comparison to InGaAsSb lattice-matched devices, due to the former's long-term development for numerous optoelectronic applications. However, lattice-matched antimony-based quaternaries offer numerous potential advantages.