Structure-phase transformation under ion implantation into GaAs

摘要

The processes of structure disordering in GaAs implanted by 100 keV Ar(sup +) and P(sup +) ions with different beam current densities have been investigated by the methods of Raman spectroscopy (RS), of He(sup +) ions channeling and transmission electron microscopy (TEM). It was shown in (6,7) that the process of crystals disordering carried the nonmonotonous, oscillating character with dose especially for binary semiconductors. The main aim of the work is the definition of beam current density and dose intervals of nonmonotonous changes of the structure perfection. 9 refs., 6 figs., 2 tabs.