On-state electrothermal modelling of large area power components and multi- chip power modules

摘要

A tool aimed at the accurate computation of the interactive temperature and power dissipation distributions over the active area of power components or modules, is presented. The temperature distribution over the whole active area is computed taking into consideration the 3D heat transfer in the package. A procedure is added in order to compute the distribution of the electrical dissipation resulting from electrothermal interaction under the assumption of an imposed on-state current. The tool allows to investigate for the upper limit of the on-state current in the device as well as for the impact on power dissipation of some influential thermal parameters such as thermal resistances of the die bonding: examples of a large IGBT chip and a MOS power module, are given