Investigation of Deep Levels in GaInNas

摘要

This paper presents and discusses the first Deep-Level transient spectroscopy (DLTS) data obtained from measurements carried out on both Schottky barriers and homojunction devices of GaInNAs. The effect of N and In doping on the electrical properties of the GaNInAs devices, which results in structural defects and interface states, has been investigated. Moreover, the location and densities of deep levels related to the presence of N, In, and N+In are identified and correlated with the device performance. The data confirmed that the presence of N alone creates a high density of shallow hole traps related to the N atom and structural defects in the device. Doping by In, if present alone, also creates low-density deep traps (related to the In atom and structural defects) and extremely deep interface states. On the other hand, the co-presence of In and N eliminates both the interface states and levels related to structural defects. However, the device still has a high density of the shallow and deep traps that are responsible for the photocurrent loss in the GaNInAs device, together with the possible short diffusion length.