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Behavior of nanocrystalline Xe precipitates in Al under 1 MeV electron211 irradiation

机译:在1 meV电子211辐照下,纳米晶Xe在al中的行为沉淀

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Crystalline nanoprecipitates of Xe have been produced by ion implantation into211u001ehigh purity Al at 300 K. With an off-zone axis TEM imaging technique, the 211u001enanocrystals may be clearly structure imaged against a nearly featureless 211u001ebackground. Under the 1 MeV electron irradiation employed for the HREM 211u001eobservation, Xe nanocrystals exhibit a number of readily observed physical 211u001ephenomena including migration within the matrix, changes in shape, faulting, 211u001emelting, crystallization and coalescence. The various phenomena observed as 211u001echanges in the Xe nanocrystals reflect changes of matrix cavity-surface 211u001estructure. The Xe nanocrystal thus allows investigation indirectly into changes 211u001ein interface morphology at the atomic level, resulting in this instance from 211u001eelectron irradiation damage. Such changes have heretofore been inaccessible to 211u001eobservation.

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