Germanium orthogonal strip detectors with amorphous-semiconductor contacts

摘要

Germanium orthogonal strip detectors have been produced using amophous-211u001esemiconductor contacts. The amorphous-semiconductor contact fabrication process 211u001eis relatively simple, and it is capable of producing fine-pitched electrode 211u001estructures. The bipolar blocking behavior of the amorphous-semiconductor contact 211u001epermits its use on both sides of a detector, replacing conventional B ion 211u001eimplanted and Li diffused contacts.