Thin Film CIGS Photovoltaic Technology. Final Technical Report 16 April 1998-15 October 2001

摘要

This report describes the state-of-the-art capabilities that were demonstrated for Mo, CIGS, and ZnO depositions at coating widths of 45 cm. The CIGS is formed by linear-source evaporation onto moving substrates using multiple line sources. The linear sources were characterized according to deposition uniformity and angular dependence of emitted flux. Uniformity maps were generated for CIGS composition and device performance over large areas. Large-area CIGS modules were produced with Voc's up to 36.9 V. High-Ga-content CIGS devices were produced in the pilot-line system with an efficiency of 11.2% (Voc 596 mV, Jsc 27.4 mA/cm2, FF 67.7%).