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Crystal Level Simulations Using Eulerian Finite Element Methods

机译:利用欧拉有限元方法进行晶体水平模拟

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Over the last several years, significant progress has been made in the use of crystal level material models in simulations of forming operations. However, in Lagrangian finite element approaches simulation capabilities are limited in many cases by mesh distortion associated with deformation heterogeneity. Contexts in which such large distortions arise include: bulk deformation to strains approaching or exceeding unity, especially in highly anisotropic or multiphase materials; shear band formation and intersection of shear bands; and indentation with sharp indenters. Investigators have in the past used Eulerian finite element methods with material response determined from crystal aggregates to study steady state forming processes. However, Eulerian and Arbitrary Lagrangian-Eulerian (ALE) finite element methods have not been widely utilized for simulation of transient deformation processes at the crystal level. The advection schemes used in Eulerian and ALE codes control mesh distortion and allow for simulation of much larger total deformations. We will discuss material state representation issues related to advection and will present results from ALE simulations.

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