Measurement and Modeling of Resistivity as a Microscale Tool to Quantify the Volume Fraction of Lenticular (alpha)' Particles in a Partially Transformed (delta)-phase Pu-Ga Matrix

摘要

We have measured and modeled the change in electrical resistivity due to partial transformation to the martensitic {alpha}{prime}-phase in a {delta}-phase Pu-Ga matrix. The primary objective is to relate the change in resistance, measured with a 4-probe technique during the transformation, to the volume fraction of the {alpha}{prime} phase created in the microstructure. Analysis by finite element methods suggests that considerable differences in the resistivity may be anticipated depending on the orientational and morphological configurations of the {alpha}{prime} particles. Finite element analysis of the computed resistance of an assembly of lenticular shaped particles indicates that series resistor or parallel resistor approximations are inaccurate and can lead to an underestimation of the predicted amount of {alpha}{prime} in the sample by 15% or more. Comparison of the resistivity of a simulated network of partially transformed grains or portions of grains suggests that a correction to the measured resistivity allows quantification of the amount of {alpha}{prime} phase in the microstructure with minimal consideration of how the {alpha}{prime} morphology may evolve. It is found that the average of the series and parallel resistor approximations provide the most accurate relationship between the measured resistivity and the amount of {alpha}{prime} phase. The methods described here are applicable to any evolving two-phase microstructure in which the resistance difference between the two phases is measurable.