FARADAY EFFECT IN SEMICONDUCTORS

摘要

The major part of the thesis is devoted to an analysis of the Faraday-rotation due to direct allowed transitions near k = 0 in semiconductors whose valence-band structure can be represented by the Luttinger-Kohn model. Specific computations have been performed to find the interband Faraday rotation in Ge, GaAs, InSb, InAs and GaSb using effective mass parameters and other band constants, previously determined by other workers. Discrepancies between theory and experiment are discussed in terms of (i) inadequacies in the band model, (ii) contributions to the rotation from other types of transitions, in particular zone-edge transitions, (iii) inaccuracies in the band parameters used.nThe agreement between theory and experiment is best for those substances for which the rotation varies monotonically with frequency, this is GaAs and InSb.