Optically Triggered Double Heterostructure Structure Linear Bilateral Phototransistor

摘要

A double heterostructure linear bilateral transistor was fabricated and demonstrated using the Ga/sub 1-x/Al/sub x/As--GaAs system. Future improvements in device performance are anticipated by using thinner base layers for higher gain and lower doped Ga/sub 1-x/Al/sub x/As layers for higher breakdown voltage. Additionally, surface passivation techniques and perhaps modified growth techniques will be employed to reduce leakage current and improve gain. (ERA citation 03:048568)