Channeling Studies of Impurity-Defect Interactions in Silicon

摘要

This thesis deals with the mechanism of defect production and interaction of introduced defects with impurity atoms in silicon single crystals. Defects are created by irradiation with energetic light particles (.2 - 3 MeV H exp + or He exp + ions). Mostly simple defects like vacancies and interstitials are produced during bombardment. (Atomindex citation 10:450551)