Spectroscopic Characterization of TeF and Oxygen Chemisorption onto Silicon (111)

摘要

Chemiluminescence from the reactions of H sub 2 Te and D sub 2 Te with fluorine was observed at 3900 to 8600 A. Two separate band systems are attributed to the B exp 2 sigma -X exp 2 pi and A exp 2 pi -X exp 2 pi transitions of the TeF radical. Moessbauer spectra were obtained of H sub 2 Te and D sub 2 Te in an argon matrix, and of TeF produced in the reaction of hydrogen telluride with fluorine. These are discussed with respect to the isotope effect and electron density calculations for the tellurium nucleus. Kinetics of chemisorption of oxygen on a silicon (111) surface were studied at 298 to 473 exp 0 K using ESCA. Results are interpreted assuming immobile adsorption requiring two nearest neighbor surface sites. The initial sticking coefficient (theta