Self-Pumping Impurity by in-Situ Metal Deposition

摘要

A system for in-situ removal of helium trapping in freshly deposited metal surface layers of a limiter or divertor has been studied. The system would trap helium on a limiter front surface, or a divertor plate, at low plasma edge temperatures, or in a limiter slot region, at high edge temperatures. Fresh material, introduced to the plasma and/or scrape-off zone, would be added at a rate of about five times the alpha production rate. The material would be reprocessed periodically, e.g. once a year. Possible materials are nickel, vanadium, niobium, and tantalum. Advantages of a self-pumping system are the absence of vacuum ducts and pumps, and the minimization of tritium processing and inventory. (ERA citation 08:055281)