X-Ray Lithography Using Wiggler and Undulator Synchrotron-Radiation Sources

摘要

A systems design approach is used to identify feasible options for wiggler and undulator beam lines for x-ray lithography in the 0.5 to 0.2 mu m linewidth region over 5 cm by 5 cm fields. Typical parameters from the Wiggler and Undulator in the Advanced Light Source designed at the Lawrence Berkeley Laboratory are used as examples. Moving from the conventional wavelengths of 4 to 9 A to very soft wavelengths around 15 A is shown to be very promising. The mask absorber thickness can be reduced a factor of three so that 0.2 mu m features can be made with a 1:1 mask aspect ratio. The mask heating limited exposure time is also reduced a factor of three to 3 sec/cm exp 2 . However, extremely thin beam line windows (1/4 mil Be) and mask supports (1 mu m Si) must be used. A wiggler beam line design using a small slit window at a scanning mirror appears feasible. A unconventional, windowless differentially pumped beam line with dual deflecting mirrors could be used with an undulator source. (ERA citation 09:001103)