Polarization Dependent Ge and Si(111) 2 X 1 Surface State Optical Absorption: A Test of Surface Reconstruction Models

摘要

We have studied the (111) 2 x 1 surface state absorption of both Si and Ge using polarization-dependent photothermal displacement spectroscopy. In addition to investigating the room temperature cleaved surface, we have also monitored the temperature dependence of the surface absorption as it is changed during annealing of the Ge(111) surface from the 2 x 1 to the c-2 x 8 structure. (ERA citation 10:024112)