Material Models and Device Structures for GaAs Solar Cells

摘要

GaAs as a solar cell material has received much attention because of its promise of high conversion efficiencies. Advantages of GaAs over Si as a photovoltaic material include: (1) a bandgap that is better matched to the solar spectrum, (2) superior performance at high operating temperatures, and (3) radiation resistance properties. Clearly, a computer program modeling the essential device physics is desirable for analysis and optimization of cell designs. Previous work in the School of Electrical Engineering at Purdue has demonstrated the utility of such a program. The work described in this thesis has been to extend the code developed at Purdue to analysis of GaAs cells. This work has been primarily directed at developing and assembling models for material parameters for GaAs relevant to photovoltaic applications, as well as identifying those material parameters and properties requiring further experimental and theoretical investigation. (ERA citation 10:004475)