Vacancy Recovery after 20 K Electron Irradiation in Sn and Te Doped Bismuth

摘要

Positron lifetime measurements give evidence of positron trapping in electron irradiated Bi, Bi(Sn), and Bi(Te) dilute alloys. The positron lifetime in a single vacancy is found to be 325+-5 ps. Long range vacancy migration starts at 77 K in Bi, 90 K in Bi(Sn) and 110 K in Bi(Te). Strong Sn-vacancy and Te-interstitial interactions are found from the study of the recovery. (ERA citation 12:026974)