On-line DLTS investigations of vacancy related defects in low-temperature electron irradiated, boron-doped Si

摘要

Vacancy-related defects in Si are explored with deep level transient spectroscopy (DLTS). The measurements are performed on-line on irradiated p-type Si and a new trap with the signature (E_(pa), σ_(pa)) = (0.18eV, 6.5 x 10~(-15) cm~2) -only present at cryogenic temperatures - is studied. Furthermore, the bi-stable boron-vacancy complex is studied and it's configuration at low temperatures is investigated and found to have the signature (E_(pa), σ_(pa)) = (0.11 eV, 8.2 x 10~(-15) cm~2).