Overview of Electron Paramagnetic Resonance Studies of Si-SiO sub 2 Interface States

摘要

There has been a long standing problem concerned with the identity of the Si-SiO sub 2 interface states which can trap electrical charge. This has been a difficult problem because of the low concentration of such defects, typically 10 sup 10 to 10 sup 12 /cm sup 2 , and the lack of experimental techniques capable of probing the nature of these defects on the atomic scale. In this paper an overview of the results that electron paramagnetic resonance has achieved in establishing the structural, electronic, chemical, and electrical identity of interface states at the Si-SiO sub 2 interface are presented. (ERA citation 11:048025)