Reliability and Electrical Properties of Gate Oxide Shorts in CMOS ICs

摘要

This paper examines the reliability of gate oxide shorts in CMOS ICs. Gate oxide shorts cause increased quiescent IDD but may not initially affect functionality. These shorts can subsequently change due to thermal and electric field stress during operation and cause functional failure. Therefore, gate oxide defects can significantly degrade CMOS IC reliability. 14 refs. (ERA citation 11:038651)