Laser Fabrication of Interconnect Structures for CMOS Gate Arrays

摘要

Maskless, automated, five minute interconnection of 1000 gate CMOS array die has been accomplished using discretionary laser-induced chemical vapor deposition. Eight 125-stage ring oscillators written on single CMOS gate array die were shown to have the device-limited performance of similar patterns manufactured by photolithographically patterned aluminum-silicon alloy. These results suggest the feasibility of using this method, Laser Pantography (LP), for rapid implementation of prototype and limited volume semi-custom VLSI circuits immediately after their design is completed. 19 refs. (ERA citation 11:023377)