Reactive Magnetron Sputtering of Titanium Nitride: Analysis of the Deposition Process

摘要

Pumping rate and gas inlet position are important parameters for elaboration of thin films of zirconium and titanium nitrides. It is observed generally that when partial pressure of nitrogen increases progressively in the plasma, total pressure increases abruptly in the enclosure. This phenomenon is reversible with hysteresis. This is due to rapid nitride formation on the target which should be weaken weakened for a better operation. It can be obtained by positioning the nitrogen inlet near the pumping system and/or in increasing pumping rate. (ERA citation 13:036846)