Thermostimulated Conductivity in Amorphous Semiconductors with Non-Exponential Density of Localized States.

摘要

We calculate the thermostimulated conductivity (TSC) in amorphous semiconductors with non-exponential density of localized states (DOS) that has been obtained from the measurements of the field-effect by Weisfield et al. (Phil. Mag. B44(1981),83). The calculated results are compared with the case of exponential density of localized states. It turns out that the low-T-peak in the TSC becomes higher than the high-T-peak when the non-exponential DOS is rapidly increased in the high energy region. Except for this point, the profile of TSC in these two cases does not exhibit a substantial difference, but the results are quantitatively different. (author). 6 refs, 6 figs. (Atomindex citation 19:054536)