MANUFACTURE OF AMORPHOUS SEMICONDUCTOR MATERIAL FORMED WITH ELECTRIC CONDUCTIVITY AND AMORPHOUS ELECTRONIC DEVICE

摘要

PURPOSE:To form an electric conductivity of an amorphous semiconductor by emitting thermal neutron to the semiconductor, and directly converting the atoms of the semiconductor by atomic reaction into electric active doner or acceptor atoms. CONSTITUTION:A hydrogenated amorphous Si semiconductor material is prepared by a glow discharge technique of high frequency power plasma decomposition of SiH4. The material is cut in a suitable size, secured in a capsule, inserted into the emitting hole of an atomic reactor, and thermal neutrons are, for example emitted at every 10, 50, 100hr. After emitting, the remaining radioactivity is inspected, and heat treated for recovery the radiation damage. The electric conductivity of the thin film implanted with thermal neutron conversion is measured by forming aluminum electrodes at the prescribed interval in vacuum evaporation, and measured. The thickness o the film is stepwisely chemically polished at the hydrogenated amorphous Si thin film with soda water to measure by an alpha beam thickness gauge.