Deformation Potentials of Some II-VI Semiconductors at K=O States

摘要

We present a tight-binding calculation of the deformation potentials for three II-VI compounds: CdTe, ZnTe and HgTe by very simple strain modifications of nondiagonal tight-binding parameters and compare them with experimental values. The agreement is good for both kinds of deformation potentials: the hydrostatic one which depends on the nondiagonal matrix elements and the uniaxial one which is mainly a measure of the diagonal interactions and thus depend directly on the tight-binding parameters used. (author). 18 refs, 1 fig., 2 tabs. (Atomindex citation 19:104117)