Piezo-Optical Determination of Deformation Potentials Relevant to Transport Properties Calculations of Multivalley Semiconductors

摘要

A piezospectroscopic investigation of the normalized wave-length-modulated absorption spectra of the phonon-assisted indirect exciton in Si (TO-phonon) and Ge (LA phonon) at 77 deg K has yielded values for the ratio of the electron-phonon to the hole-phonon matrix elements for the gamma-delta (Si) and gamma-L (Ge) transitions. (Author)