Preparation and Properties of High-Deposition-Rate a-Si:H Films and Solar Cells Using Disilane: Annual Subcontract Report, 1 May 1987--30 April 1988.

摘要

This report contains results of the first year of research on producing p-i-n amorphous silicon solar cells with the intrinsic layer deposited from higher order silanes at deposition rates of 1 nm/s or more. The research was divided into three major areas: diagnostic studies of monosilane and disilane RF discharges using optical emission spectroscopy and mass spectrometry to assist in optimizing discharge conditions and gas-phase processes; parametric studies of material properties of 1-layers prepared form disilane as a function of deposition rate and other process parameters; and parametric studies of p-i-n devices with the i-layer prepared from disilane at various deposition rates. The focus during the first year was to fabricate a p-i-n solar cell with 9/percent/ AM1.5 efficiency over an area greater than 0.08 cm sup 2 with the i-layer deposited at 1 nm/s or more. Material properties such as the dark and AM1.5 light conductivities, optical band gap, and conductivity activation energy showed a weak dependence on deposition rate. The performance characteristics of unoptimized p-i-n solar cells with i-layers prepared from disilane were independent of the deposition rate of the i-layer. A p-i-n device was prepared at a rate close to 1 nm/s with an AM1.5 efficiency of 9/percent/. 20 refs, 26 figs, 2 tabs. (ERA citation 13:048400)