Graded Al(sub x)Ga(sub 1-x) as photoconductive devices for high efficiency picosecond optoelectronic switching.

摘要

Picosecond photoconductivity has been achieved for a variety of semiconductor materials by techniques which have now become almost standard. Enhanced scattering by the excessive amount of deep level defects which provide for picosecond recombination lifetimes significantly reduce the mobility, degrading the responsivity of the photoconductor. This paper will present a concept where improved responsivity is achievable by utilizing a graded bandgap Al(sub x)Ga(sub 1-x)As active detecting layer grown on a high defect density GaAs layer by molecular beam epitaxy (MBE). 7 refs., 6 figs.