Photoluminescence and structural characterization of MeV erbium implanted silica glass.

摘要

Suprasil glass (amorphous SiO(sub 2)) has been implanted with 2.9 MeV Er ions at fluences of 3.4 (times) 10(sup 15) and 3.4 (times) 10(sup 16) ions/cm(sup 2). Photoluminescence spectra of implanted samples show a clear luminescent transition around (lambda) = 1.54 (mu)m, corresponding to an intra-4f transition of Er(sup 3+). Fluorescence decay times are in the range 1--8 ms., depending on implantation fluence and annealing treatment. UV absorption and IR reflection spectroscopy are employed to characterize beam-induced defects in the silica network. The results indicate that defects in the silica network play an important role in the energy transfer processes in the Er:silica system. 15 refs., 3 figs.