Fluorescence lifetime studies of MeV erbium implanted silica glass

摘要

MeV erbium ion implantation into various SiO/sub 2/ glasses has been studied with the aim of incorporating the rare-earth dopant as an optically active ion in the silica network. The lifetime of the excited state ranges from 1.6 to 12.8 ms, depending on base material and implantation fluence. These results have positive implications for silica-based integrated optical technology.