Simulation, design, and fabrication of thin-film resistive-gate GaAs charge coupled devices.

摘要

Computer simulation of high-speed Gallium Arsenide Charge Coupled Devices is performed using the two-dimensional semiconductor device simulation program BAMBI (Basic Analyzer for Mos and BIpolar devices). The effect of active layer thickness and doping concentration on the Charge Transfer Efficiency (CTE) and the dynamic range is investigated using different active layers. Also, different gate architectures are compared for optimum dynamic range and compatibility with GaAs MESFET technology. Both Capacitive Gate CCD (CGCCD) and Resistive Gate CCD (RGCCD) are considered. The measured performance of the fabricated GaAs CCD is compared with modelled results. 2 refs., 2 figs.