Low pressure MOCVD growth of InSb.

摘要

Low pressure (200 Torr) metalorganic chemical vapor deposition (MOCVD) of InSb has been examined through variation of the Column III (TMIn) and Column V (TMSb or TESb) precursor partial pressures. The use of lower growth pressure significantly enhanced the range of allowable Column III Column V partial pressures in which specular morphology InSb could be obtained without the formation of In droplets or Sb crystals. In addition, a 70% improvement in the average hole mobility was obtained, compared to InSb grown in the same reactor at atmospheric pressure. SIMS analysis revealed that Si at the substrate/epitaxial layer interface is an important impurity that may contribute to degradation of the mobility. Substitution of TESb for TMSb did not result in any improvement in the purity of the InSb. 6 refs.