Studies of the dependence on oxidation thermal processes of effects on the electrical properties of silicon detectors by fast neutron radiation

摘要

High resistivity silicon detectors along with MOS capacitors made on five silicon dioxides with different thermal conditions (975(degree)C to 1200(degree)C) have been exposed to fast neutron irradiation up to the fluence of a few times 10(sup 14) n/cm(sup 2). New measurement techniques such as capacitance-voltage (C-V) of MOS capacitors and current-voltage (I-V) of back to back diodes (p(sup +)-n(sup (minus))- p(sup +) if n(sup (minus)) is not inverted to p) or resistors (p(sup +)-p-p(sup +) if inverted) have been introduced in this study in monitoring the possible type-inversion (n(yields)p) under high neutron fluence. No type-inversion in the material underneath SiO(sub 2) and the p(sup +) contact has been observed so far in this work for detectors made on the five oxides up to the neutron fluence of a few times 10(sup 13) n/cm(sup 2). However, it has been found that detectors made on higher temperature oxides (T = or