Studies of deep level transient spectroscopy of DX centers in GaAlAs: Te under uniaxial stress.

摘要

DX centers in Al(sub 0.38)Ga(sub 0.62)As doped with Te have been studied by Deep Level Transient Spectroscopy (DLTS) as a function of uniaxial stress. No splitting nor broadening of the DLTS peaks were observed. However, the peak positions and heights dep ...