Damage growth in MgAl2O4 crystals by Xe ion irradiations

摘要

We have studied damage kinetics in single crystal MgAl2O4 (spinel) with (l00) orientation under 370 keV Xe ion irradiations at temperatures of (minus)100 and 400C. In-situ Rutherford Backscattering Spectrometry (RBS) and ion channeling have been used to monitor the damage accumulation in spinel following sequential Xe ion irradiations. A significant temperature effect on the irradiation damage has been found. Channeling data show that at (minus)100C, the irradiated spinel layer reaches the same level as in a random spectrum at a dose of 8 (times) 10(sup 15) Xe/cm(sup 2) (20 DPA for peak damage), while at 400C, the near surface region (50 nm) remains single-crystalline up to 2 (times) l0(sup l6) Xe/cm(sup 2).